2007 ?n 3 ?? ?????p?~?\??@? this product is scheduled be obsolete on march 2007. not recommend for new design. 6R1MBI75P-160 diode module diode module with brake diode:1600v / 75a, igbt:1400a/50a features compact package p.c. board mount module converter diode bridge dynamic brake circuit applications inverter for motor drive ac and dc servo drive amplifier uninterruptible power supply maximum ratings and characteristics absolute maximum ratings (tc=25c unless without specified) item symbol condition rating unit repetitive peak reverse voltage non-repetitive peak reverse voltage average output current one cycle surge current i 2 t operation junction temperature collector-emitter voltage gate-emitter voltage collector current collector power disspation repetitive peak reverse voltage operation junction temperature brake converte storage junction temperature isolation voltage mounting screw torque v rrm v rsm i o i fsm i 2 t t j v ces v ges i c i cp p c v rrm t j t stg v iso 50hz/60hz sine wave tc=115c from rated load from rated load dc tc=25c tc=75c 1ms tc=25c tc=75c 1 device ac : 1 minute m5 screw 1600 1760 75 600 1440 -40 to +125 1400 20 50 35 100 70 240 1400 +150 -40 to +125 3000 2.0 to 2.5 v v a a a 2 s c v v a a w v c c v nm fofward voltage reverse current zero gate voltage collector current gate-emitter leakage current collector-emitter saturation voltage turn-on time turn-off time reverse current electrical characteristics (tj=25c unless otherwise specified) item symbol condition min. typ. max. unit thermal characteristics item symbol condition min. typ. max. unit thermal resistance thermal resistance(case to fine) v fm i rrm i ces i ges v ce(sat) ton tr toff tf i rrm r th(j-c) r th(c-f) tj=25c, i fm =75a tj=150c, v r =v rrm v ge =0v. v ce =1400v v ce =0v. v ge =20v v ge =15v. i c =35a vcc=800v ic=35a v ge =15v r g =33ohm converter per total loss per each device brake igbt (1 device) with thermal compound 1.35 15 1.0 200 2.4 2.8 0.35 1.2 0.25 0.6 0.45 1.0 0.08 0.3 1.0 0.16 0.96 0.70 0.08 v ma ma na v s ma c/w c/w brake co.
2007 ?n 3 ?? ?????p?~?\??@? this product is scheduled be obsolete on march 2007. not recommend for new design. 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0 10 20 30 40 50 60 70 80 forward current if (a) max typ 150deg 25deg forward characteristics f orwar d v o lt age o utp ut c urre nt - to ta l l o s s 0 50 100 150 200 250 0 20406080 output current io (a ) total loss (w) surge c urrent 0 100 200 300 400 500 600 700 0.01 0.1 1 peak surge current ifsm(a) tim e output current - case temperature 50 60 70 80 90 100 110 120 130 0 20406080 o utput current io (a ) case temperature tc(deg.c ) transient thermal impedance 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 zth(j-c)(deg.c/w) tim e () [ brake ] transient thermal impedance 0.01 0.1 1 10 0.001 0.01 0.1 1 10 tim e (s ec ) zth(j-c)(t) (deg.c/w) ig bt fw d 6R1MBI75P-160 diode module
2007 ?n 3 ?? ?????p?~?\??@? this product is scheduled be obsolete on march 2007. not recommend for new design. 6R1MBI75P-160 diode module 012345 0 20 40 60 80 8v 10v 12v 15v vge= 20v [ brake ] collector current vs. collector-emitter voltage tj= 25c (typ.) collector current : ic [ a ] collector - emitter voltage : vce [ v ] 012345 0 20 40 60 80 8v 10v 12v 15v vge= 20v [ brake ] collector current vs. collector-emitter voltage tj= 125c (typ.) collector - emitter voltage : vce [ v ] collector current : ic [ a ] 012345 0 20 40 60 80 tj= 25c tj= 125c [ brake ] collector current vs. collector-emitter voltage vge=15v (typ.) collector - emitter voltage : vce [ v ] collector current : ic [ a ] 5 10152025 0 2 4 6 8 10 ic= 17.5a ic= 35a ic= 70a [ brake ] collector-emitter voltage vs. gate-emitter voltage tj= 25c (typ.) collector - emitter voltage : vce [ v ] gate - emitter voltage : vge [ v ] 0 5 10 15 20 25 30 35 100 1000 10000 [ brake ] capacitance vs. collector-emitter voltage (typ.) vge=0v, f= 1mhz, tj= 25c capacitance : cies, coes, cres [ pf ] collector - emitter voltage : vce [ v ] coes cres cies 0 100 200 300 400 0 200 400 600 800 1000 [ brake ] dynamic gate charge (typ.) vcc=800v, ic=35a, tj= 25c gate charge : qg [ nc ] collector - emitter voltage : vce [ v ] 0 5 10 15 20 25 gate - emitter voltage : vge [ v ]
2007 ?n 3 ?? ?????p?~?\??@? this product is scheduled be obsolete on march 2007. not recommend for new design. diode module outline drawings, mm equivalent circuit schematic 6R1MBI75P-160 k c e g k c e g 3 28.5 32 11 11 11.75 14 14 13 17 2.5 6 1.5 k c g e 6r1mbi100p-160 japan 2.1 3.4 2 x t1 r1 20.4 90 78.5 7 11.75 14 7 0.5 21 7 23.5 16 4- 6.1 2- 5.5 - + c3 ? ? ? ? 6R1MBI75P-160
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